| Year | Title | Metal | Oxide | Anneal. | |||||||||||||||||||||
| 2018 BG IGZO TFT South China U
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Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT - IEEE Electron Device Letter | ITO(30nm)/Cu(100nm) DCMagSput,RT,100W, 2mTorr |
IGZO ITO |
300 C, 1 h Ar atmosphere in an atmosphere annealing furnace. |
ITO가 Cu에 대해 barrier 역할을 함. |  |
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| 2015 BG ZnO TFT Wu Han U, China |
The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors | Al Ti Sn Cu |
ZnO 20 nm | RTA 200 C for 3 min. | AlOx and TiOx 생성,
Sn, Cu는 도핑효효과 |
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| 2015 Michigan U. |
Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy | IGZO
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 왼쪽은 바이어스 스트레스 전(+20V, 80 C), 오른쪽은 후. 바이어스 스트레스 후 IGZO내 산소 증가는 electric field adsorption of oxygen species such as O2− or O− on the application of a positive gate bias temperature stress at 80 œC. Outdiffusion of the elements indium, gallium and zinc is also speculated which is corre- lated to the decrease in their respective concentrations after being subjected to positive bias temperature stress. |
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| 2014 BG IGZO TFT Rochester Institute of Tech. US |
Impact of Annealing on Contact Formation and Stability of IGZO TFTs | Mo, Al Mo는 표면 산화를 막기 위해 표면에 알루미늄을 증착하고 진행 |
IGZO | 350 œC air | Al S/D은 특성
열화-->interfacial oxidation Mo 는 특성 향상 |
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