HOME

 Thin insulator IV 특성

 

- Vertical TFTThin insulator IV 특성

-IGZO-Metal-IGZO-diffusion

- 양극산화

- Metal 산화

 

Year Title Metal Oxide Anneal.    
             
2012

SKKU

Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide Ti IGZO

IGZO

Thickness 200 nm
In:Ga:Zn:O  
Depo. DC Sputt.
Temp.  
Gas  
Pressure  
Power  
P.Ann.  

PECVD SiOx passivation

 

 

Equip. Convection Oven
Temp 250C,300C,

350C

Time 1h
Heating rate  
Ambient Air
Pressure AP
Mo/IGZO/Ti 다이오드

   

 

 

2008

USA

Effects of dielectric thickness and contact area on current-voltage characteristics of thin film metal-insulator-m   NiO 5nm

by Plasma oxidation of Ni

 
2005 Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs   Al2O3 1.5 ~ 6 nm

by ALD