| Year | Title | Oxide | Anneal. | ||||||||||||||||||||
| 2012 TIT |
Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O |
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18Odiffusion was performed in a sealed silica tube fully filled by a 98%-18Ogas.The diffusion temperature (Tann) was varied from 100 to 400 C, and the diffusion duration was fixed to 1 hour |  |
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