| Year | Title | Metal | Oxide | Anneal. | |||||||||||||||||||||||||||||||
| 2013 KHU Suwon |
Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors | Ti Evaoiration |
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| 2013 SKKU |
Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer |
|
250 C, 5min 3cycle |  |
열처리 후 AlOx두께 증가 7~8nm
|
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| 2012 SKKU |
Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide | Ti | IGZO IGZO
PECVD SiOx passivation
|
|
Relative quantities of the equilibrium phase
calculated by HSC thermodynamics simulation program as a function of
annealing temperature,
Ti and In are most likely to be oxidized and reduced, respectively, at 0 C–400 C. |
 |
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| 2012 SNU |
Effects of metal electrode on the electrical performance of amorphous In-Ga-Zn-O thin film transistor | Mo Al Cu/Mo(200nm) DC sputter, RT, Ar 4mTorr, 50W |
IGZO | 250 C, 1h, air |
 |
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| No Ann. |
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