| Year | Title | Metal | Oxide | Anneal. | |||
| 2017 Tongji University China |
Ionic transport and barrier effect of anodic oxide layer in a solid-state Al2O3capacitor under high electric field | Al (Evaporation 100 nm) |
AmAO (Amorphous Aluminum oxide210 nm) Sol-Gel, Spin coating |
 |
the cyclic measurement. The cross-sectional FESEM image, Fig.
5d, after the 3 cyclic voltammetric measurements is a strong
evidence on the formation of the anodic aluminum oxide (AAO) layer
at the Al/AmAO interface. It is suggested that the newly-formed AAO
layer inhibited the formation of voids and hillocks in the Al
electrode
|
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| 2008 Iowa State U. |
Device quality low temperature gate oxide growth using electron cyclotron resonance plasma oxidation of silicon | Si wafer | Plasma Oxidation |
 |
 
기판에 양의 전압을 가하면 oxidation 이 더 많이 됨 |
||
