| Year | Title | Thick of GI | GI Process |
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| 2008 USA |
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| 2005 UK |
Low-voltage, high-performance organic field-effect transistors with an ultra-thin TiO2 layer as gate insulator | TlO2. 15nm | Anodic oxidation of Ti Constant-current mode (j = 0.5 mA/cm2)in 10-3 M citric acid (99+ %, Aldrich, UK) to the desired voltage VA=5 V, 10 V, and 20 V 2.4 uF/cm2
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Pentacene PTTA
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