| Year | Authors | Title | IGZO | GI | Post Ann. | |
| 2015 Arizona State U. 학위온문 |
Muhammad Ruhul Hasin | Post processing Treatment of InGaZnO Thin Film Transistors for Improved Bias-Illumination Stress Reliability | 
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| 2009 TIT, Japan |
Toshio Kamiya, Kenji Nomura, and Hideo Hosono |
Origins of High Mobility and Low Operation Voltage of Amorphous
Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping |
 the
improvement of the Hall mobility is not associated with
crystallization but with structural relaxation by keeping the
amorphous structure. The structural relaxation starts at a rather
low temperature ofC, but higher tem- peratures, e.g., 300 C would be necessary to enhance the structure relaxation. |
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| 2008 Ryukoku U., TIT |
Mutsumi Kimura,Takashi Nakanishi, Kenji Nomura, Toshio Kamiya, and Hideo Hosono |
Trap densities in amorphous-InGaZnO4 thin-film transistors Mutsumi |
열처리 후 밴드갭 내의 defect state 감소(300 °C in air for 1 h)
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| 2011 H.J, Kim Younsei |
Hyun Soo Shina, Byung Du Ahnb, You Seung Rima and Hyun Jae Kima |
Annealing temperature dependence on the positive bias stability of
IGZO thin-film transistors |
RF Magnetron Sputtering In2O3:Ga2O3:ZnO=1:1:1 mol%) Ar:O2 = 65:35 1mTorr |
Thermal SiO2 |
for 3 h in air, at 400◦C, 500◦C, 600◦C, and 700◦C |
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