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AZO열처리 효과

　

 

 

 

 

 

 N-type conductivity in intrinsic ZnO:  zinc interstitials and oxygen vacancies.

When a small amount of Al was distributed into the ZnO film, the Al was ionized into Al3+ and substituted for Zn2+. Thus, one free electron was generated from one zinc atom replacement by an aluminum atom.

The electrical conductivity in AZO film  was primarily due to the contribution of Al ions on substitutional sites of Zn ions and Al interstitial atoms, as well as from oxygen vacancies and Zn interstitial atoms.

 

 

 

 

Year Authors Title AZO  
         
2015

Taiwan

 Yu-Ming Lin, Chien-Hsun Chu, Hung-Wei Wu and  Jow-Lay Huang Study of AZO Thin Films Under Different Annealing Atmosphere on Structural, Optical and Electrical Properties by rf Magnetron Sputtering AZO condition
Thickness 100 nm (0.0143 nm/s)
Al2O3 : ZnO 2:98 wt%
Depo. RF mag.Sputt.
Temp. 70 C
Gas Ar  180 sccm
Pressure 22mTorr
Power 200 W
Annealing RTA

resistivity of 6.04 × 10-4 Ω-cm

The decrease in carrier concentration can be related to segregation of metal atoms into grain boundaries, where they become inactive as donors and modify the potential barrier for charge transport across the grains, resulting also in a mobility decrease [25].- 200 C 보다 높은 온도에서 캐리어 농도와 이동도 모두 감소하는데 금속 원자가 결정입계에서 석출되는 것을 원인으로 제시
2015

Korea

 Jaehyeong Lee, Yong Seob Park Characteristics of Al-doped ZnO films annealed at various temperatures
for InGaZnO-based thin-film transistors		    
2010

Spain

 C. Guille´n, and J. Herrero Optical, electrical and structural characteristics of Al:ZnO thin films with various thicknesses deposited by DC sputtering at room temperature and annealed in air or vacuum AZO condition
Thickness 2 nm/s
Al2O3 : ZnO 2: 98 wt%
Depo. DC mag.Sputt.
Temp. RT
Gas Ar and O2
Pressure 0.4 Pa
Power 2 W/cm2
Annealing  
transmittance 85–90% and resistivity 1.6–2.0 m Ohm cm,

In AZO thin films, changes in the carrier concentration have been related to creation or annihilation of donor oxygen vacancies [11,19,20], in addition to crystalline quality variations that modify the effective doping of Al onto Zn lattice sites [11,21]. Both crystallinity and carrier concentration affect also the mobility [14]. X-ray
2010

 

 

 Weifeng Yang, Zhengyun Wu, Zhuguang Liu, Aisuo Pang, Yu-Li Tu, Zhe Chuan Feng Room temperature deposition of Al-doped ZnO films on quartz substrates by radio-frequency magnetron sputtering and effects of thermal annealing AZO condition
Thick. 2 nm/s
Al2O3 : ZnO 2: 98 wt%
Depo. RFmag.Sputt.
Temp. RT
Gas Ar 30sccm
Pressure  
Power 300 W
Annealing  
4.60×10−4  Ω cm

 

Formation of Al–O bonds from Al ion and adsorbed oxygen at the grain boundaries. Some of Al ions will become inactive, i.e., no free electrons are released. Moreover, the Al–O bonds will impede the motion of carriers, thereby reducing their mobility.

XRD  of AZO
2002

China
G. J. Fang, D. J. Li, and B.-L. Yao		 Effect of Vacuum Annealing on the Properties of Transparent Conductive AZO Thin Films Prepared by DC Magnetron Sputtering AZO condition
Thickness 400 nm (15–25 nm/min)
Al2O3 : ZnO 2: 98 wt% about
Depo. DC mag.Sputt.
Temp. RT
Gas Ar
Pressure mTorr
Power 70W
Annealing 450 C, 2h, Vac.
3.33 x 10–4 Ohm cm 

The oxygen vacancies have played an important role in the improvement of electrical conductivity of these vacuum annealed AZO thin films. The more oxygen vacancies exist, the higher is the carrier concentration and the electrical conductivity