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증착	sputtering	산소분압효과
열처리	IGZO열처리효과	14 상온에서 증착된 IGZO 박막의 열처리 온도에 따른 특성 JID Annealing temperature dependence on the positive bias stability of IGZO thin-film transistors
	IGZO 고압 N2 ??처???과	140731 Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
	IGZO H2O 고압??소 ??처???과	140300 Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing 130410 Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing 11_APL98,103509] Effect of high-pressure oxygen annealing on NBIS-induced instability of IGZO TFTs
	고압??처?/font>	131224_Manifestation of reversal conductivity on high pressurizing of solution-processed ZnSnO thin-film transistors at low temperature
?�	고압 O2	140620 Densification effects on solution processed indium??gallium??zinc??oxide films and their thin-film transistors
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Etch stopper	?�	140822_The effect of a zinc??tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium??gallium??zinc-oxide thin-film transistors
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구조	Fully self aligned	140401 Photoresist-Free Fully Self-Patterned Transparent Amorphous Oxide Thin-Film Transistors Obtained by Sol-Gel Process
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Stability	Bias and Light	101201 EDL Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and SiO2 Gate Dielectrics
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Photosensitivity	?�	080520 SIDPhotosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays
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