| Year | Authors | Title | IGZO | GI | ||
| 2011 National Cheng |
C.J. Chiu a, Z.W. Pei b, S.T. Chang b, S.P. Chang a,*, S.J. Chang a | Effect ofoxygen partial pressure on electrical characteristics ofamorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing |
RF Sput. atomic ratio In:Ga:Zn 1:1:1, 99.99% pure oxygen partial pressures (0.1%, 0.14%, and 0.2%) |
PVP |    |
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| National Cheng Kung University, Tainan, Taiwan | ShengPo Chang, TsungHan Yang, ChaoJen Ho, ShoouJinn Chang |
Effect of Oxygen Partial Pressure on Electrical Characteristics of
Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors Type |
RF Sput. In/Ga/Zn=1.1:1.1:0.9 mol% oxygen partial pressures (0%, 2%, and 4%) |
200-nm-thick SiO2 PECVD |   |
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