| TFT | Insulator | Spin/time | Bake | Cure | Thickness | |||||
| 2018 SKKU |
 Pentacene: evaporation, 70 nm (Shadow mask) |
aluminum nitrate nonahydrate (Al(NO3) ž 9H2O) and
zirconium oxynitrate hydrate (ZrO(NO3)2 ž xH2O) were mixed with
H2O2, which was used as a stabilizer, in 2–ME.
|
spin Both solution were stirred for 12 h under ambient conditions and filtered through 0.1 μm, 0.2 μm polytetrafluoroethlene(PTFE) syringe filters |
200 ◦C for 10 min, | 350◦C for 30 min, Hotplate | AlZrOx60 nm | AlZrOx solution spin- coated to a
thickness of 60nm onto a UV/Ozone-treated substrate. The film was pre-baked at 200 ? for 10 min to remove the solvent and annealed at 350 ? for 30min by hotplate. For the PMMA layer, PMMA solution spin-coated to a thickness 160 nm and annealing at 100 ? for 30min. |
 |
 |
High Performance Pentacene TFTs with a Solution Processed PMMA / AlZrO x Gate Dielectric |
| For the 4% PMMA solution, Polymethyl methacrylate (PMMA) were mixed in Toluene. |
100 ◦C for 30 min, | PMMA 70nm | ||||||||