| TFT | Insulator | Spin/time | Bake | Cure | Thickness | ||||
| 2008 Yonsei U.
|
ZnO Top gate | PVP | spin | 75 ◦C for 1h,
Vacuum |
45 nm | 0.48 cm2/Vs, Ion/Ioff=~103
|
 |
Low-voltage-driven top-gate ZnO thin-film transistors with polymer/high-k oxide double-layer dielectric | |
