| TFT Active | Insulator | ||||||
| 2008 | 30-nm a-IGZO RF Sput. |
Al2O3, 300 C, ALD The defect-rich storage layer: the pulse intensity of TMA source as high as ∼300 Pa. |
  |
 |
Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors with Defect-Engineered Alumina Dielectric | ||
| 2008 SAIT |
IGZO rfSputt. RT
|
SiNx(PECVD) | Short channel: 0.5 um by e-beam |
 |
 |
Short channel characteristics of gallium-indium-zinc-oxide thin film transistors for three-dimensional stacking memory | |