| Year | Group | Film | Precursor | Subst. | Carrier gas | Purge time | Reactant | Purge time | IGZO PostAnn. | GI | Gate | S/D | Final Ann. | TFT structure | Vth | u cm2 /Vs |
ss
V /dec |
Ion /Ioff | Title | Title | Journal | ||
| In pre-cursor | Ga pre-cursor | Zn pre-cursor | |||||||||||||||||||||
| 2019. 04 | J. K. Jung | 13nm 250C IGZO |
80 C | RT | RT | P+ Si wafer | N2/50sccm | 10s | Ozone 970sccm O3/30sccm N2 |
10s | Air/200,300,400 C/1h | 100 nm
thermal oxide |
P+Si wafer | ITO | Air, 250C, 1h | Bottom gate | 2.41 | 22.1 | 0.30 | >E8 |
 |
Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer | IEEE EDL |
| 2017 | S. M. Yoon | IGZO | New | New | Diethyl zinc (DEZn) | 150 C ITO(S/D) coated glass |
Ozone | 50nm Al2O3 ALD | 200C ALD AZO |
100nm ITO | O2, 200C, 1h |
 |
SiO2 spacer: 5.7 PI spacer: 7.1
|
SiO2 spacer: 2.6 PI spacer: 1.21
|
SiO2 spacer: E1 PI spacer: E3
|
 |
Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer | IEEE EDL | |||||
| 2017 | S. M. Yoon | IGZO | New | New | Diethyl zinc (DEZn) | 130, 150, 170C | N2 | Ozone | 9nm200C ALD Al2O3/100nm 150C,ALD Al2O3 | ITO | ITO | 230, 250, and 230C |
 |
130C ALD/6.1 170C ALD/14.8 |
0.09 | 2E9 |
 ?�W/L=40/20 |
Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using IGZO Active Channels Prepared by Atomic-Layer Deposition | ACS Appl. Mater. Interfaces | ||||
| 2015 | Holst Center | IGZO | trimethyl indium [In(CH3)3, (TMIn)] RT |
triethyl gallium
[Ga(C2H5)3, TEGa] RT |
Diethyl zinc
[Zn(C2H5)2, (DEZ)] RT |
200 C (P+ Si Wafer) |
Ar | H2O (50 C bubble) |
300 nm thermal oxide | Ti(5nm)/Au(50nm) |  W/L=1mm/50um |
Spatial Atmospheric Atomic Layer Deposition of
InxGayZnzO for Thin Film Transistors |
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