[첫인사]

Hello everyone!

My name is SANGMIN LEE at a undergraduates 3rd grades at department of Digital display engineering, hoseo university

I am very glad to be here.

[Content]

The table of contents consists of introduction, experiment, result and conclusion.

[introduction]

First, let me introduce the experiment.

The solution process can reduce the process time and cost.

The SOG is the solution process to get Silicon Oxide.

A SOG film was formed with MOS structure according to the dilution ratio of SOG to IPA.

[experiment – 1 ]

It’s my purpose to the evaluation of SOG film by dilution ratio.

So, I Spin-coated diluted SOG solution for an insulator.

And, The MOS structure was fabricated and C-V, Breakdown voltage, Leakage current were measured.

The Solutions was prepared by diluting with IPA.

[experiment – 2]

And then, this slide shows the experiment before more detail proceeded in this order.
First, p-type silicon wafer was cleaned with a Nitrogen gun.

Next, the device that is coated with SOG insulator using spin coater.

Coating at 3000 rpm for 30 seconds will coat the insulator with a thickness of 3400 angstroms.

The coated device is then baked at 80 degree C for 5 minutes and 130 degree C for 5 minutes and 180 degree C for 20 minutes.
Next, it is furnace annealed at a temperature of 450 degree C for 1 hour in nitrogen ambient.

After the annealing process, covered a shadow mask on the device and deposit to Aluminum Silicon on top of the insulator using a sputter.
The size of the electrode was a circular shape with a radius of 0.8mm.
And next, pre sputtering time 200 seconds, and sputtering time 400 seconds.

And next, the C-V, L/C, VB were measured after deposition of Al electrodes on  top surface of the SOG film.

[Figure 2]

To the next, this slide shows result of the Capacitance for the diluted solution.
In the table below, the K value is calculated as follows.

As the IPA dilution concentration increased, the curve area was identified and the value of the dielectric constant was also increased.

[Figure 3]
And this slide shows result of the leakage current for the diluted solution, respectively.

In case of SOG 100%, the leakage current of device is high.

When SOG 50% + IPA 50% and SOG 25% + IPA 75% are compared, it can be seen that the leakage current of SOG 25% + IPA 75% is slightly small.

[Figure 4]

And next, this slide shows result of the VB for the various diluted solution.

In general, it can be seen that the SOG 100 % insulator does not break even when applied to about 3 [MV / cm], it was confirmed that a high current flow.

In case of SOG 50% + IPA 50%, breakdown occurred under 2 [MV/cm], but in most cases, breakdown occurred in more than 2 cases in SOG 25% + IPA 75%.

[Conclusion]

SOG was diluted with IPA and coated. The dilution effect was studied.

Since the diluted film becomes thinner, it is deposited several times to adjust the thickness of the film to a certain thickness.

The leakage current of the SOG film deposited by dilution was less than undiluted SOG film.

It is preferable to use diluted SOG solution for an insulating film of a thin film transistor.

Thank you for your attention.